Department of Structural Biology, Genentech Inc., South San Francisco, CA 94080, USA.
Department of Neuroscience, Genentech Inc., South San Francisco, CA 94080, USA.
Science. 2015 Dec 18;350(6267):aac5464. doi: 10.1126/science.aac5464.
Voltage-gated sodium (Nav) channels propagate action potentials in excitable cells. Accordingly, Nav channels are therapeutic targets for many cardiovascular and neurological disorders. Selective inhibitors have been challenging to design because the nine mammalian Nav channel isoforms share high sequence identity and remain recalcitrant to high-resolution structural studies. Targeting the human Nav1.7 channel involved in pain perception, we present a protein-engineering strategy that has allowed us to determine crystal structures of a novel receptor site in complex with isoform-selective antagonists. GX-936 and related inhibitors bind to the activated state of voltage-sensor domain IV (VSD4), where their anionic aryl sulfonamide warhead engages the fourth arginine gating charge on the S4 helix. By opposing VSD4 deactivation, these compounds inhibit Nav1.7 through a voltage-sensor trapping mechanism, likely by stabilizing inactivated states of the channel. Residues from the S2 and S3 helices are key determinants of isoform selectivity, and bound phospholipids implicate the membrane as a modulator of channel function and pharmacology. Our results help to elucidate the molecular basis of voltage sensing and establish structural blueprints to design selective Nav channel antagonists.
电压门控钠离子(Nav)通道在可兴奋细胞中传播动作电位。因此,Nav 通道是许多心血管和神经疾病的治疗靶点。选择性抑制剂的设计一直具有挑战性,因为哺乳动物的 9 种 Nav 通道亚型具有高度的序列同一性,并且仍然难以进行高分辨率结构研究。针对参与疼痛感知的人 Nav1.7 通道,我们提出了一种蛋白质工程策略,使我们能够确定与亚型选择性拮抗剂结合的新型受体部位的晶体结构。GX-936 和相关抑制剂与电压传感器域 IV(VSD4)的激活状态结合,其阴离子芳基磺酰胺弹头与 S4 螺旋上的第四个门控电荷相互作用。通过阻止 VSD4 的失活,这些化合物通过电压传感器捕获机制抑制 Nav1.7,可能通过稳定通道的失活状态来实现。来自 S2 和 S3 螺旋的残基是亚型选择性的关键决定因素,结合的磷脂表明膜是通道功能和药理学的调节剂。我们的研究结果有助于阐明电压感应的分子基础,并建立设计选择性 Nav 通道拮抗剂的结构蓝图。