Ghule Namdev V, Bhosale Rajesh S, Bhosale Sidhanath V, Srikanth Turlapati, Rao Nandiraju V S, Bhosale Sheshanath V
Polymers and Functional Materials Division CSIR-Indian Institute of Chemical Technology Hyderabad 500007, Telangana India.
Chemistry Department Assam University Silchar 788011, Assam India.
ChemistryOpen. 2017 Nov 15;7(1):61-67. doi: 10.1002/open.201700151. eCollection 2018 Jan.
A series of new unsymmetrically substituted naphthalenediimide (NDI) moieties to were synthesized. The structures of these compounds were confirmed by means of FT-IR, H NMR, C NMR, ESI-mass and HRMS spectroscopic measurements. UV/Vis and fluorescence spectroscopy were employed to investigate the photophysical properties of the prepared compounds in solution and in the solid state. Using the onset of UV/Vis absorption, the optical band gaps were calculated. Cyclic voltammetry measurements were performed to study the electrochemical behavior and to calculate the LUMO energy levels. The thermal properties of NDI derivatives were studied by differential scanning calorimetry. The mesomorphic birefringent behavior of the NDI derivatives was investigated with polarizing optical microscopy. Among all of the studied NDI derivatives, only , , and showed liquid crystalline texture, owing to the presence of an amide linkage for H-bonding along with aromatic moieties for π-π-stacking.
合成了一系列新的不对称取代萘二酰亚胺(NDI)部分。通过傅里叶变换红外光谱(FT-IR)、氢核磁共振谱(¹H NMR)、碳核磁共振谱(¹³C NMR)、电喷雾电离质谱(ESI-mass)和高分辨率质谱(HRMS)光谱测量确定了这些化合物的结构。采用紫外可见光谱(UV/Vis)和荧光光谱研究了所制备化合物在溶液和固态中的光物理性质。利用UV/Vis吸收的起始点计算了光学带隙。进行循环伏安法测量以研究电化学行为并计算最低未占分子轨道(LUMO)能级。通过差示扫描量热法研究了NDI衍生物的热性质。用偏光显微镜研究了NDI衍生物的介晶双折射行为。在所有研究的NDI衍生物中,只有[此处可能遗漏具体化合物编号]、[此处可能遗漏具体化合物编号]和[此处可能遗漏具体化合物编号]呈现液晶织构,这是由于存在用于氢键的酰胺键以及用于π-π堆积的芳香部分。