School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou, 510006, Guangdong, China.
School of Environmental Science and Engineering, South China University of Technology, Guangzhou, 510006, Guangdong, China.
Anal Bioanal Chem. 2019 Nov;411(27):7165-7175. doi: 10.1007/s00216-019-02100-w. Epub 2019 Sep 5.
A new fluorescence sensor (QDs-IIP), based on ion-imprinted polymers (IIP) as recognition element and Mn-doped ZnS quantum dots (QDs) as fluorophore, was synthesized for the selective and sensitive determination of hexavalent chromium (Cr(VI)) ions. The QD was first coated by SiO layer, and then modified with Cr(VI)-imprinted polymer. Several parameters affecting fluorescence intensity such as tetraethylorthosilicate (TEOS) volume, ZnS:Mn@SiO amount, and radiation time were investigated and optimized. The QDs-IIP was characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR), transmission electron microscope (TEM), and scanning electron microscope (SEM). Furthermore, the fluorescence quenching mechanism was investigated by using UV-VIS and fluorescence spectrophotometer, and it was found that internal filtration effect was the main fluorescence quenching mechanism. The relative fluorescence intensity (F/F) increased linearly with the increase of Cr(VI) concentration in the range of 20 μg L-1.0 mg L. The QDs-IIP sensor showed high recognition selectivity for Cr(VI) in comparison with the QDs-NIP sensor with an imprinting factor (IF) of 2.53, and it could be reused 5 times. In addition, an analytical method of Cr(VI) based on the QDs-IIP sensor was established with a limit of detection of 5.48 μg L, and was then applied to actual water samples with satisfactory results. Therefore, QDs-IIP can be deemed as a practicable fluorescent sensor for trace Cr(VI) detection. Graphical abstract.
一种基于离子印迹聚合物(IIP)作为识别元件和锰掺杂的 ZnS 量子点(QDs)作为荧光团的新型荧光传感器(QDs-IIP)被合成,用于选择性和灵敏地测定六价铬(Cr(VI))离子。首先将 QD 涂覆一层 SiO 层,然后用 Cr(VI)印迹聚合物进行修饰。研究并优化了影响荧光强度的几个参数,如正硅酸乙酯(TEOS)体积、ZnS:Mn@SiO 量和辐照时间。通过 X 射线衍射(XRD)、傅里叶变换红外(FTIR)、透射电子显微镜(TEM)和扫描电子显微镜(SEM)对 QDs-IIP 进行了表征。此外,还通过紫外可见分光光度计和荧光分光光度计研究了荧光猝灭机制,发现内滤效应是主要的荧光猝灭机制。相对荧光强度(F/F)随 Cr(VI)浓度在 20μg L-1至 1.0 mg L-1范围内的增加而线性增加。与没有印迹的 QDs-NIP 传感器相比,QDs-IIP 传感器对 Cr(VI)具有较高的识别选择性,印迹因子(IF)为 2.53,并且可以重复使用 5 次。此外,建立了基于 QDs-IIP 传感器的 Cr(VI)分析方法,检测限为 5.48μg L,并用于实际水样,结果令人满意。因此,QDs-IIP 可视为用于痕量 Cr(VI)检测的实用荧光传感器。