Manawar Rohit B, Gondaliya Mitesh B, Shah Manish K, Jotani Mukesh M, Tiekink Edward R T
Chemical Research Laboratory, Department of Chemistry, Saurashtra University, Rajkot - 360005, Gujarat, India.
Department of Physics, Bhavan's Sheth R. A. College of Science, Ahmedabad, Gujarat - 380001, India.
Acta Crystallogr E Crystallogr Commun. 2019 Sep 10;75(Pt 10):1423-1428. doi: 10.1107/S2056989019012349. eCollection 2019 Oct 1.
The title Schiff base compound, CHClNO, features an configuration about each of the C=N imine bonds. Overall, the mol-ecule is approximately planar with the dihedral angle between the central CN residue (r.m.s. deviation = 0.0371 Å) and the peripheral hy-droxy-benzene and chloro-benzene rings being 4.9 (3) and 7.5 (3)°, respectively. Nevertheless, a small twist is evident about the central N-N bond [the C-N-N-C torsion angle = -172.7 (2)°]. An intra-molecular hy-droxy-O-H⋯N(imine) hydrogen bond closes an (6) loop. In the crystal, π-π stacking inter-actions between hy-droxy- and chloro-benzene rings [inter-centroid separation = 3.6939 (13) Å] lead to a helical supra-molecular chain propagating along the -axis direction; the chains pack without directional inter-actions between them. The calculated Hirshfeld surfaces point to the importance of H⋯H and Cl⋯H/H⋯Cl contacts to the overall surface, each contributing approximately 29% of all contacts. However, of these only Cl⋯H contacts occur at separations less than the sum of the van der Waals radii. The aforementioned π-π stacking inter-actions contribute 12.0% to the overall surface contacts. The calculation of the inter-action energies in the crystal indicates significant contributions from the dispersion term.
席夫碱化合物CHClNO的每个C=N亚胺键均具有反式构型。总体而言,分子近似平面结构,中心CN残基(均方根偏差 = 0.0371 Å)与外围羟基苯环和氯苯环之间的二面角分别为4.9 (3)°和7.5 (3)°。然而,围绕中心N-N键有明显的小扭曲[C-N-N-C扭转角 = -172.7 (2)°]。分子内羟基O-H⋯N(亚胺)氢键形成一个六元环。在晶体中,羟基苯环和氯苯环之间的π-π堆积相互作用[质心间距 = 3.6939 (13) Å]导致沿z轴方向延伸的螺旋超分子链;这些链堆积时彼此之间没有定向相互作用。计算得到的 Hirshfeld 表面表明H⋯H和Cl⋯H/H⋯Cl接触对整个表面很重要,它们各自约占所有接触的29%。然而,其中只有Cl⋯H接触发生在小于范德华半径之和的距离处。上述π-π堆积相互作用对总表面接触的贡献为12.0%。晶体中相互作用能的计算表明色散项有显著贡献。