High-mobility junction field-effect transistor via graphene/MoS heterointerface.

Monolayer molybdenum disulfide (MoS) possesses a desirable direct bandgap with moderate carrier mobility, whereas graphene (Gr) exhibits a zero bandgap and excellent carrier mobility. Numerous approaches have been suggested for concomitantly realizing high on/off current ratio and high carrier mobility in field-effect transistors, but little is known to date about the effect of two-dimensional layered materials. Herein, we propose a Gr/MoS heterojunction platform, i.e., junction field-effect transistor (JFET), that enhances the carrier mobility by a factor of ~ 10 (~ 100 cm V s) compared to that of monolayer MoS, while retaining a high on/off current ratio of ~ 10 at room temperature. The Fermi level of Gr can be tuned by the wide back-gate bias (V) to modulate the effective Schottky barrier height (SBH) at the Gr/MoS heterointerface from 528 meV (n-MoS/p-Gr) to 116 meV (n-MoS/n-Gr), consequently enhancing the carrier mobility. The double humps in the transconductance derivative profile clearly reveal the carrier transport mechanism of Gr/MoS, where the barrier height is controlled by electrostatic doping.