Yang Li, Zhou Jian-Ping, Chen Qi-Wen, Yang Hong-Dan
School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, People's Republic of China.
Nanotechnology. 2022 Jul 26;33(42). doi: 10.1088/1361-6528/ac800e.
Type II p-n heterojunction and direct Z-scheme heterojunction are identical staggered band alignments, but were reported ambiguously in many composite photocatalysts because their carriers migrate in opposite directions. In this research, metal oxides CuO, NiO and CoO-based heterojunctions with NaMgTiO(NMTO) were synthesized via a simple hydrothermal method. The CuO/NMTO heterojunction was demonstrated as a direct Z-scheme heterojunction, whereas the NiO/NMTO and CoO/NMTO heterojunctions showed type II p-n band alignment, distinguished by the direct observation of carrier migration under light illumination, and confirmed by the x-ray photoelectron spectroscopy, Mott-Schottky measurements, ultraviolet photoelectron spectra and capture experiments. These all heterojunctions enjoyed better photocatalytic performance to degrade methylene blue and antibiotics (Enrofloxacin, Metronidazole and tetracycline) than the pure NMTO, attributed to their effective separation of the photoinduced electron-hole pairs owing to the staggered band alignment. Prominently, the NiO/NMTO and CoO/NMTO p-n heterojunctions exhibited superior degradation ability to the CuO/NMTO Z-scheme heterojunction. The initial relative Fermi position of two semiconductors is the prerequisite to determine whether the p-n heterojunction or direct Z-scheme heterojunction is built because the electrons diffuse from one semiconductor with a higher Fermi level to another with a lower Fermi level while the holes diffuse reversely until a united Fermi level when they combine. The built-in electric field at the heterojunction interface is determined by the difference in the initial Fermi levels or work functions of two semiconductors, regulating the separation ability of photogenerated electrons and holes to affect the photocatalytic performance. Thus, the high difference in the initial Fermi levels of semiconductors is crucial in the development of heterojunctions with staggered band alignment to obtain high performance in photocatalytic reactions.
II型p-n异质结和直接Z型异质结具有相同的交错能带排列,但在许多复合光催化剂中报道并不明确,因为它们的载流子迁移方向相反。在本研究中,通过简单的水热法合成了基于金属氧化物CuO、NiO和CoO的与NaMgTiO(NMTO)的异质结。CuO/NMTO异质结被证明是直接Z型异质结,而NiO/NMTO和CoO/NMTO异质结表现出II型p-n能带排列,通过光照下载流子迁移的直接观察得以区分,并通过X射线光电子能谱、莫特-肖特基测量、紫外光电子能谱和捕获实验得到证实。所有这些异质结在降解亚甲基蓝和抗生素(恩诺沙星、甲硝唑和四环素)方面都比纯NMTO具有更好的光催化性能,这归因于它们由于交错能带排列而有效地分离了光生电子-空穴对。值得注意的是,NiO/NMTO和CoO/NMTO p-n异质结对CuO/NMTO Z型异质结表现出卓越的降解能力。两种半导体的初始相对费米位置是确定构建p-n异质结还是直接Z型异质结的前提条件,因为电子从费米能级较高的一种半导体扩散到费米能级较低的另一种半导体,而空穴则反向扩散,直到它们复合时达到统一的费米能级。异质结界面处的内建电场由两种半导体的初始费米能级或功函数的差异决定,调节光生电子和空穴的分离能力以影响光催化性能。因此,半导体初始费米能级的高度差异对于开发具有交错能带排列的异质结以在光催化反应中获得高性能至关重要。