Efficient Gate Modulation in a Screening-Engineered MoS/Single-Walled Carbon Nanotube Network Heterojunction Vertical Field-Effect Transistor.

In this report, a screening-engineered carbon nanotube (CNT) network/MoS/metal heterojunction vertical field effect transistor (CNT-VFET) is fabricated for an efficient gate modulation independent of the drain voltage. The gate field in the CNT-VFET transports through the empty space of the CNT network without any screening layer and directly modulates the MoS semiconductor energy band, while the gate field from the Si back gate is mostly screened by the graphene layer. Consequently, the on/off ratio of CNT-VFET maintained 10 in overall drain voltages, which is 10 times and 1000 times higher than that of the graphene (Gr) VFET at = 0.1 (ratio = 81.9) and 1 V (ratio = 3), respectively. An energy band diagram simulation shows that the Schottky barrier modulation of CNT/MoS contact along the sweeping gate bias is independent of the drain voltage. On the other hand, the gate modulation of Gr/MoS is considerably reduced with increased drain voltage because more electrons are drawn into the graphene electrode and screens the gate field by applying a higher drain voltage to the graphene/MoS/metal capacitor.