Jiang Lei, Ding Haizhen, Lu Siyu, Geng Ting, Xiao Guanjun, Zou Bo, Bi Hong
School of Chemistry and Chemical Engineering, Anhui Key Laboratory of Modern Biomanufacturing, Anhui University, 111 Jiulong Road, Hefei, 230601, China.
College of Chemistry and Molecular Engineering, Zhengzhou University, 100 Kexue Road, Zhengzhou, 450001, China.
Angew Chem Int Ed Engl. 2020 Jun 15;59(25):9986-9991. doi: 10.1002/anie.201913800. Epub 2019 Dec 6.
Photoactivation in CdSe/ZnS quantum dots (QDs) on UV/Vis light exposure improves photoluminescence (PL) and photostability. However, it was not observed in fluorescent carbon quantum dots (CDs). Now, photoactivated fluorescence enhancement in fluorine and nitrogen co-doped carbon dots (F,N-doped CDs) is presented. At 1.0 atm, the fluorescence intensity of F,N-doped CDs increases with UV light irradiation (5 s-30 min), accompanied with a blue-shift of the fluorescence emission from 586 nm to 550 nm. F,N-doped CDs exhibit photoactivated fluorescence enhancement when exposed to UV under high pressure (0.1 GPa). F,N-doped CDs show reversible piezochromic behavior while applying increasing pressure (1.0 atm to 9.98 GPa), showing a pressure-triggered aggregation-induced emission in the range 1.0 atm-0.65 GPa. The photoactivated CDs with piezochromic fluorescence enhancement broadens the versatility of CDs from ambient to high-pressure conditions and enhances their anti-photobleaching.
紫外/可见光照射下,CdSe/ZnS量子点(QDs)中的光激活可改善光致发光(PL)和光稳定性。然而,在荧光碳量子点(CDs)中未观察到这种现象。现在,本文报道了氟和氮共掺杂碳点(F,N掺杂CDs)中的光激活荧光增强现象。在1.0 atm下,F,N掺杂CDs的荧光强度随紫外光照射(5 s - 30 min)而增加,同时荧光发射发生蓝移,从586 nm变为550 nm。在高压(0.1 GPa)下暴露于紫外光时,F,N掺杂CDs表现出光激活荧光增强。在施加逐渐增加的压力(1.0 atm至9.98 GPa)时,F,N掺杂CDs表现出可逆的压致变色行为,在1.0 atm至0.65 GPa范围内表现出压力触发的聚集诱导发光。具有压致变色荧光增强的光激活CDs拓宽了CDs在从环境条件到高压条件下的多功能性,并增强了它们的抗光漂白能力。