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一种用于溶液可加工绿色磷光有机发光二极管的茚并咔唑基主体材料。

An indenocarbazole-based host material for solution processable green phosphorescent organic light emitting diodes.

作者信息

Park Eun Young, Lee Da Hwan, Le Thi Na, Shin Chol-Min, Lee Jihoon, Suh Min Chul

机构信息

Department of Information Display, Kyung Hee University Dongdaemun-gu Seoul 02447 Republic of Korea

Department of Polymer Science and Engineering, Department of IT·Energy Convergence (BK21 FOUR), Korea National University of Transportation Chungju 27469 Republic of Korea

出版信息

RSC Adv. 2021 Sep 1;11(47):29115-29123. doi: 10.1039/d1ra04855d.

Abstract

We designed and synthesized a new host material with a highly soluble and thermally stable indenocarbazole derivative (7,7-dimethyl-5-phenyl-2-(9-phenyl-9-carbazol-3-yl)-5,7-dihydro-indeno[2,1-]carbazole) that can make green phosphorescent organic light-emitting diodes (PHOLEDs) in a solution process. In particular, these are used in a blue common layer structure in which green and red-emitting layers are formed by a solution process and blue common layers are thermally evaporated. The new host material possesses excellent hole transport capability and high triplet energy (T). Mainly we designed the hole dominant material to keep the exciton forming area away from the hole transport layer (HTL) and emitting layer (EML) interface, an interfacial mixing area to improve device performance. As a result, the greatest lifetime of 1300 hours was achieved and a high current efficiency of up to 66.3 cd A was recorded when we used the optimized device structure of a 5 nm thick bipolar exciton blocking layer (B-EBL). It may be a good agreement of exciton confinement and reduced electron accumulation at the HTL and EML interface.

摘要

我们设计并合成了一种新型主体材料,其为具有高溶解性和热稳定性的茚并咔唑衍生物(7,7 - 二甲基 - 5 - 苯基 - 2 - (9 - 苯基 - 9 - 咔唑 - 3 - 基) - 5,7 - 二氢 - 茚并[2,1 - ]咔唑),该材料可通过溶液法制备绿色磷光有机发光二极管(PHOLED)。特别地,这些材料用于蓝色公共层结构中,其中绿色和红色发光层通过溶液法形成,蓝色公共层通过热蒸发形成。这种新型主体材料具有优异的空穴传输能力和高三重态能量(T)。主要是我们设计了空穴主导材料,以使激子形成区域远离空穴传输层(HTL)和发光层(EML)界面,即一个用于改善器件性能的界面混合区域。结果,当我们使用5纳米厚的双极激子阻挡层(B - EBL)的优化器件结构时,实现了最长1300小时的寿命,并记录到高达66.3 cd/A的高电流效率。这可能是激子限制与减少HTL和EML界面处电子积累的良好契合。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36e8/9040653/22f7e95d9163/d1ra04855d-s1.jpg

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