Yang Min, Mu Hongyan, Gao Jiaan, Zhen Qi, Wang Xiaonan, Guan Xiaotong, Li Hui, Li Bo
Jilin Key Laboratory of Solid-State Laser Technology and Application, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
School of Civil Engineering, Changchun Institute of Technology, Changchun 130012, China.
Molecules. 2024 Jun 6;29(11):2692. doi: 10.3390/molecules29112692.
DFT and TD-DFT were used in this article to investigate the effects of different substitutions at multiple sites on the photophysical mechanism of bis-HBX in the gas phase. Four different substitution modes were selected, denoted as A (X=Me, Y=S), A (X=OMe, Y=S), B (X=Me, Y=NH), and C (X=Me, Y=O). The geometric parameters proved that the IHBs enhanced after photoexcitation, which was conducive to promote the ESIPT process. Combining the analysis of the PECs, it was revealed that the bis-HBX molecule underwent the ESIPT process, and the ease of the ESIPT process was in the order of A > A> B > C. In particular, the TICT process in A and B promoted the occurrence of the ESIPT process. In addition, the IC process was identified, particularly in C. Meanwhile, the calculation of fluorescence lifetime and fluorescence rate further confirmed that A was the most effective fluorescent probe molecule. This theoretical research provides an innovative theoretical reference for regulating ESIPT reactions and optimizing fluorescent probe molecules.
本文采用密度泛函理论(DFT)和含时密度泛函理论(TD-DFT)研究了气相中多个位点不同取代基对双-HBX光物理机制的影响。选择了四种不同的取代模式,分别记为A(X = Me,Y = S)、A(X = OMe,Y = S)、B(X = Me,Y = NH)和C(X = Me,Y = O)。几何参数表明,光激发后分子内氢键(IHBs)增强,这有利于促进激发态质子转移(ESIPT)过程。结合势能曲线(PECs)分析可知,双-HBX分子经历了ESIPT过程,且ESIPT过程的难易程度顺序为A > A > B > C。特别地,A和B中的扭转分子内电荷转移(TICT)过程促进了ESIPT过程的发生。此外,还确定了内转换(IC)过程,尤其是在C中。同时,荧光寿命和荧光速率的计算进一步证实A是最有效的荧光探针分子。该理论研究为调控ESIPT反应和优化荧光探针分子提供了创新性的理论参考。