Chen Xiaofeng, Zhu Yu, Xu Yan, Rao Mei, Pang Pengfei, Zhang Bo, Xu Chenhui, Ni Wang, Li Guanghui, Wu Jishan, Li Miaomiao, Chen Yongsheng, Geng Yanhou
School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China.
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350507, China.
Angew Chem Int Ed Engl. 2025 Jan 10;64(2):e202413965. doi: 10.1002/anie.202413965. Epub 2024 Oct 25.
All-polymer photodetectors possess unique mechanical flexibility and are ideally suitable for the application in next-generation flexible, wearable short-wavelength infrared (SWIR, 1000-2700 nm) photodetectors. However, all-polymer photodetectors commonly suffer from low sensitivity, high noise, and low photoresponse speed in the SWIR region, which significantly diminish their application potential in wearable electronics. Herein, two polymer acceptors with absorption beyond 1000 nm, namely P4TOC-DCBT and P4TOC-DCBSe, were designed and synthesized. The two polymers possess rigid structure and good conformational stability, which is beneficial for reducing energetic disorder and suppressing dark current. Owing to the efficient charge generation and ultralow noise current, the P4TOC-DCBT-based all-polymer photodetector achieved a specific detectivity ( ) of over 10 Jones from 650 (visible) to 1070 nm (SWIR) under zero bias, with a response time of 1.36 μs. These are the best results for reported all-polymer SWIR photodetectors in photovoltaic mode. More significantly, the all-polymer blend films exhibit good mechanical durability, and hence the P4TOC-DCBT-based flexible all-polymer photodetectors show a small performance attenuation (<4 %) after 2000 cycles of bending to a 3 mm radius. The all-polymer flexible SWIR organic photodetectors are successfully applied in pulse signal detection, optical communication and image capture.
全聚合物光电探测器具有独特的机械柔韧性,非常适合应用于下一代柔性、可穿戴的短波长红外(SWIR,1000 - 2700 nm)光电探测器。然而,全聚合物光电探测器在SWIR区域通常存在灵敏度低、噪声高和光响应速度慢的问题,这显著降低了它们在可穿戴电子设备中的应用潜力。在此,设计并合成了两种吸收波长超过1000 nm的聚合物受体,即P4TOC - DCBT和P4TOC - DCBSe。这两种聚合物具有刚性结构和良好的构象稳定性,有利于减少能量无序和抑制暗电流。由于高效的电荷产生和超低的噪声电流,基于P4TOC - DCBT的全聚合物光电探测器在零偏压下从650(可见光)到1070 nm(SWIR)的比探测率( )超过10 Jones,响应时间为1.36 μs。这些是报道的光伏模式下全聚合物SWIR光电探测器的最佳结果。更重要的是,全聚合物共混膜表现出良好的机械耐久性,因此基于P4TOC - DCBT的柔性全聚合物光电探测器在弯曲半径为3 mm的情况下经过2000次循环后性能衰减很小(<4%)。全聚合物柔性SWIR有机光电探测器成功应用于脉冲信号检测、光通信和图像捕获。