Security and Disruptive Technologies Portfolio, National Research Council Canada, 1200 Montreal Road, M-12, Ottawa, Ontario K1A 0R6, Canada.
Nanoscale. 2015 Oct 14;7(38):15741-7. doi: 10.1039/c5nr04851f. Epub 2015 Sep 9.
A novel purification process for the enrichment of sc-SWCNTs that combines selective conjugated polymer extraction (CPE) with selective adsorption using silica gel, termed hybrid-CPE (h-CPE), has been developed, providing a high purity sc-SWCNT material with a significant improvement in process efficiency and yield. Using the h-CPE protocol, a greater than 5 fold improvement in yield can be obtained compared to traditional CPE while obtaining sc-SWCNT with a purity >99.9% as assessed by absorption spectroscopy and Raman mapping. Thin film transistor devices using the h-CPE derived sc-SWCNTs as the semiconductor possess mobility values ranging from 10-30 cm(2) V(-1) s(-1) and current ON/OFF ratio of 10(4)-10(5) for channel lengths between 2.5 and 20 μm.
一种新颖的纯化工艺,用于富集单壁碳纳米管(sc-SWCNTs),该工艺结合了选择性共轭聚合物萃取 (CPE) 和硅胶的选择性吸附,称为杂化-CPE (h-CPE),已被开发出来,提供了一种高纯度的 sc-SWCNT 材料,在提高工艺效率和产量方面有显著的改进。使用 h-CPE 方案,与传统 CPE 相比,产量可提高 5 倍以上,同时通过吸收光谱和拉曼映射评估,获得的 sc-SWCNT 纯度>99.9%。使用 h-CPE 衍生的 sc-SWCNTs 作为半导体的薄膜晶体管器件具有 10-30 cm(2) V(-1) s(-1)的迁移率值和 10(4)-10(5)的电流 ON/OFF 比,沟道长度在 2.5 到 20 微米之间。