Gao Yang, Liu Zhibo, Sun Dong-Ming, Huang Le, Ma Lai-Peng, Yin Li-Chang, Ma Teng, Zhang Zhiyong, Ma Xiu-Liang, Peng Lian-Mao, Cheng Hui-Ming, Ren Wencai
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China.
Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China.
Nat Commun. 2015 Oct 9;6:8569. doi: 10.1038/ncomms9569.
Large-area monolayer WS2 is a desirable material for applications in next-generation electronics and optoelectronics. However, the chemical vapour deposition (CVD) with rigid and inert substrates for large-area sample growth suffers from a non-uniform number of layers, small domain size and many defects, and is not compatible with the fabrication process of flexible devices. Here we report the self-limited catalytic surface growth of uniform monolayer WS2 single crystals of millimetre size and large-area films by ambient-pressure CVD on Au. The weak interaction between the WS2 and Au enables the intact transfer of the monolayers to arbitrary substrates using the electrochemical bubbling method without sacrificing Au. The WS2 shows high crystal quality and optical and electrical properties comparable or superior to mechanically exfoliated samples. We also demonstrate the roll-to-roll/bubbling production of large-area flexible films of uniform monolayer, double-layer WS2 and WS2/graphene heterostructures, and batch fabrication of large-area flexible monolayer WS2 film transistor arrays.
大面积单层二硫化钨(WS2)是下一代电子和光电子应用中理想的材料。然而,使用刚性和惰性衬底进行大面积样品生长的化学气相沉积(CVD)存在层数不均匀、畴尺寸小和缺陷多的问题,并且与柔性器件的制造工艺不兼容。在此,我们报道了通过常压CVD在金上自限催化表面生长毫米尺寸的均匀单层WS2单晶和大面积薄膜。WS2与金之间的弱相互作用使得能够使用电化学鼓泡法将单层完整转移到任意衬底上,而无需牺牲金。WS2显示出高晶体质量以及与机械剥离样品相当或更优的光学和电学性能。我们还展示了均匀单层、双层WS2以及WS2/石墨烯异质结构的大面积柔性薄膜的卷对卷/鼓泡生产,以及大面积柔性单层WS2薄膜晶体管阵列的批量制造。