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即刻早期基因在记忆痕迹形成过程中突触可塑性及神经元集群中的作用。

Role of Immediate-Early Genes in Synaptic Plasticity and Neuronal Ensembles Underlying the Memory Trace.

作者信息

Minatohara Keiichiro, Akiyoshi Mika, Okuno Hiroyuki

机构信息

Medical Innovation Center/SK Project, Graduate School of Medicine, Kyoto University Kyoto, Japan.

出版信息

Front Mol Neurosci. 2016 Jan 5;8:78. doi: 10.3389/fnmol.2015.00078. eCollection 2015.

Abstract

In the brain, neuronal gene expression is dynamically changed in response to neuronal activity. In particular, the expression of immediate-early genes (IEGs) such as egr-1, c-fos, and Arc is rapidly and selectively upregulated in subsets of neurons in specific brain regions associated with learning and memory formation. IEG expression has therefore been widely used as a molecular marker for neuronal populations that undergo plastic changes underlying formation of long-term memory. In recent years, optogenetic and pharmacogenetic studies of neurons expressing c-fos or Arc have revealed that, during learning, IEG-positive neurons encode and store information that is required for memory recall, suggesting that they may be involved in formation of the memory trace. However, despite accumulating evidence for the role of IEGs in synaptic plasticity, the molecular and cellular mechanisms associated with this process remain unclear. In this review, we first summarize recent literature concerning the role of IEG-expressing neuronal ensembles in organizing the memory trace. We then focus on the physiological significance of IEGs, especially Arc, in synaptic plasticity, and describe our hypotheses about the importance of Arc expression in various types of input-specific circuit reorganization. Finally, we offer perspectives on Arc function that would unveil the role of IEG-expressing neurons in the formation of memory traces in the hippocampus and other brain areas.

摘要

在大脑中,神经元基因表达会随着神经元活动而动态变化。特别是,诸如egr - 1、c - fos和Arc等即早基因(IEGs)的表达在与学习和记忆形成相关的特定脑区的神经元亚群中迅速且选择性地上调。因此,IEG表达已被广泛用作经历长期记忆形成基础可塑性变化的神经元群体的分子标记。近年来,对表达c - fos或Arc的神经元进行的光遗传学和药物遗传学研究表明,在学习过程中,IEG阳性神经元编码并存储记忆回忆所需的信息,这表明它们可能参与记忆痕迹的形成。然而,尽管有越来越多的证据表明IEGs在突触可塑性中发挥作用,但与此过程相关的分子和细胞机制仍不清楚。在这篇综述中,我们首先总结了关于表达IEG的神经元群体在组织记忆痕迹中作用的近期文献。然后,我们重点关注IEGs,特别是Arc,在突触可塑性中的生理意义,并描述我们关于Arc表达在各种类型的输入特异性电路重组中的重要性的假设。最后,我们提供了关于Arc功能的观点,这将揭示表达IEG的神经元在海马体和其他脑区记忆痕迹形成中的作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/567a/4700275/230513a62c5c/fnmol-08-00078-g001.jpg

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