First demonstration of robust tri-gate-GaOnano-membrane field-effect transistors.

Nano-membrane tri-gate-gallium oxide (-GaO) field-effect transistors (FETs) on SiO/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with the footprint channel width of 50 nm. For high-quality interface between-GaOand gate dielectric, atomic layer-deposited 15 nm thick aluminum oxide (AlO) was utilized with tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope () of 61 mV dec, high drain current () ON/OFF ratio of 1.5 × 10, and negligible transfer characteristic hysteresis. We also experimentally demonstrated robustness of these devices with current-voltage (-) characteristics measured at temperatures up to 400 °C.